Tunnel Magnetoresistance Over 100% in MgO-Based Magnetic Tunnel Junction Films With Perpendicular Magnetic L1$_{0}$-FePt Electrodes

By M. Yoshikawa, E. Kitagawa, T. Nagase, T. Daibou, M. Nagamine, K. Nishiyama, T. Kishi, H. Yoda. IEEE transactions on magnetics, 2008

196 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/99595d8b261f5bf285d57d5c6f1789b8d85f6616

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Hideo Ohno
2. T. Kawahara
3. Akio Fukushima
4. Shinji Yuasa
5. R. Takemura
6. Kenchi Ito
7. Fumihiro Matsukura
8. C. Marrows

In Condensed Matter Physics

1. T. Kawahara
2. R. Takemura
3. Hideo Ohno
4. Kenchi Ito

In Electronic, Optical and Magnetic Materials

1. Hideo Ohno
2. C. Marrows
3. Albert Fert

Citations in the corpus

• Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAM (2008, methodology): “The STT switching of a TMR element with perpendicular magnetic anisotropy has attracted considerable attention in recent years ( 2-7 ), because of small cell size of 6F 2 and the lower programming current”
• Spin-transfer torque RAM technology: Review and prospect (2012, background): “[22] obtained a TMR ratio of more than 100% for L10-ordered FePt/MgO/Fe/ L10-ordered FePt, and Yakushiji et al.”