Ultra-Fast Perpendicular Spin–Orbit Torque MRAM

By M. Cubukcu, Olivier Boulle, N. Mikuszeit, C. Hamelin, T. Brächer, N. Lamard, M. Cyrille, L. Buda-Prejbeanu, Kevin Garello, I. Miron and 7 more. IEEE transactions on magnetics, 2015

137 citations recorded by the source corpus.

We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below 10 ns, which translates into a minimum in the write energy in the nanosecond range. Our results show that spin–orbit torque-MRAM allows for fast and low-power write operations, which makes it promising for non-volatile cache memory applications.

Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/e95d1bb77e64c9542bb2704c87e872dd15201233

Citations in the corpus

• Magnetism, symmetry and spin transport in van der Waals layered systems (2021, unknown): “The matrix Υ is antisymmetric and translate into a cross product between the current and the rotation axis H e = Υ yx J × ˆ zzz .”