Vertical-current-induced domain-wall motion in MgO-based magnetic tunnel junctions with low current densities

By André Chanthbouala, R. Matsumoto, Julie Grollier, Vincent Cros, A. Anane, A. Fert, Alexey Khvalkovskiy, K. Zvezdin, K. Nishimura, Y. Nagamine and 4 more. 2011

175 citations recorded by the source corpus.

In the past few years, there have been a number of proposals for fabricating magnetic memories based on the current-induced motion of magnetic domain walls. A device that uses a novel geometry for injecting electrical currents into the sample is shown to work with current densities that are two orders of magnitude lower than in previous approaches.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/359059e6f61ca533cfae33bd9244d832a0813851

Citations in the corpus

• Neuromorphic Spintronics (2020, unknown): “Chanthbouala et al. 27 and Lequeux et al. 28 experimentally demonstrated this memristive functionality through domain wall motion in magnetic tunnel junctions.”