Quantitative measurement of voltage dependence of spin-transfer torque in MgO-based magnetic tunnel junctions
By H. Kubota, Akio Fukushima, K. Yakushiji, T. Nagahama, Shinji Yuasa, K. Ando, H. Maehara, Y. Nagamine, K. Tsunekawa, D. Djayaprawira and 2 more. 2008
473 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/6eba8e1d55ece2e52f49bcfd5d3f892ac49bfef5
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In Atomic and Molecular Physics, and Optics
- Pietro Gambardella
- J. Sinova
- T. Jungwirth
- A. Manchon
- I. Miron
- Kevin Garello
- Can-Ming Hu
- A. Thiaville
In Electronic, Optical and Magnetic Materials
In Materials Chemistry
Citations in the corpus
- Vertical-current-induced domain-wall motion in MgO-based magnetic tunnel junctions with low current densities (2011, methodology): “On the contrary, the inplane torque TIP can only induce a small shift of the DW of a few nm.”
- Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems (2018, background): “SOT has also been recently proposed in magnetic tunnel junctions (MTJs) composed of a single FM with interfacial spin-orbit coupling (Manchon, 2011a).”
- Towards Low-Power High-Efficiency RF and Microwave Energy Harvesting (2014, background): “Since this technology is now widespread and will continue to expand into new applications, all the tools are available for mass production of RF spindiodes.”
- Proposal of a Spin Torque Majority Gate Logic (2010, background): “We have also studied the influence of various factors—the Oersted magnetic field (OMF) produced by the current in the nanopillars and the FLT [26] on the switching of the STMG [see Fig.”