The interaction of oxygen vacancies with grain boundaries in monoclinic HfO2

By K. McKenna, Alexander L. Shluger. 2009

202 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/e12802876289082692cc1e8e3fd8f5f368882a0f

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In Electrical and Electronic Engineering

1. Gennadi Bersuker
2. Luca Larcher
3. Luca Vandelli
4. O. Pirrotta
5. Andrea Padovani
6. Daniele Ielmini

Citations in the corpus

• Grain boundary-driven leakage path formation in HfO2 dielectrics (2011, methodology): “To identify the structural properties of the GB responsible for the current flow, we performed ab initio calculations (see the methodology in [3, 4]) of the GB structures in monoclinic HfO2.”
• Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching (2015, background): “Ab-initio calculations and conductive atomic force microscopy measurements indicate that positively charged oxygen vacancies accumulate in the GBs, while oxygen ions are energetically driven to diffuse out of the GB sites [16], [17].”