High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

By Yi Xuan, Yanqing Wu, P. D. Ye. IEEE Electron Device Letters, 2008

295 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/26e4569992fc56cabaed88068363038ff0a9c252