A Review of SiC Power Module Packaging Technologies: Challenges, Advances, and Emerging Issues

By Haksun Lee, V. Smet, R. Tummala. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020

394 citations recorded by the source corpus.

Power module packaging technologies have been experiencing extensive changes as the novel silicon carbide (SiC) power devices with superior performance become commercially available. This article presents an overview of power module packaging technologies in this transition, with an emphasis on the challenges that current standard packaging face, requirements that future power module packaging needs to fulfill, and recent advances on packaging technologies. The standard power module structure, which is a widely used current practice to package SiC devices, is reviewed, and the reasons why novel packaging technologies should be developed are described in this article. The packaging challenges associated with high-speed switching, thermal management, high-temperature operation, and high-voltage isolation are explained in detail. Recent advances on technologies, which try to address the limitations of standard packaging, both in packaging elements and package structure are summarized. The trend toward novel soft-switching power converters gave rise to problems regarding package designs of unconventional module configuration. Potential applications areas, such as aerospace applications, introduce low-temperature challenges to SiC packaging. Key issues in these emerging areas are highlighted.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/cf13d359e2114387415ce9040f948a868c5d89c9

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In Electrical and Electronic Engineering

Citations in the corpus

Power Electronics Reliability: State of the Art and Outlook (2021, background): “Advanced packaging technologies [9] and converter-level reduction of parasitics and couplings between the power loop and gate driver loop can address this issue [39].”
Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective (2023, background): “The commercialization of SiC devices dates back to the first SiC Schottky barrier diodes (SBDs) introduced to the market by Infineon in 2001 and the first SiC MOSFETs in discrete packages by Cree and Rohm in 2010–2011 [20].”