Spin-transfer effects in nanoscale magnetic tunnel junctions

By G. Fuchs, N. Emley, I. Krivorotov, Patrick M. Braganca, E. Ryan, S. Kiselev, J. Sankey, D. Ralph, Robert A. Buhrman, Jordan A. Katine. 2004

250 citations recorded by the source corpus.

We report measurements of magnetic switching and steady-state magnetic precession driven by spin-polarized currents in nanoscale magnetic tunnel junctions with low-resistance, <5Ωμm2, barriers. The current densities required for magnetic switching are similar to values for all-metallic spin-valve devices. In the tunnel junctions, spin-transfer-driven switching can occur at voltages that are high enough to quench the tunnel magnetoresistance, demonstrating that the current remains spin polarized at these voltages.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/54954fefe2e09a71f33dfc0f211f596701cd04e7

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In Atomic and Molecular Physics, and Optics

In Electrical and Electronic Engineering

Citations in the corpus

Spin-polarised currents and magnetic domain walls (2005, background): “For permalloy they estimated that for a current density of 1011 A/m2, u 7m/s.”
Interface-Induced Phenomena in Magnetism (2016, unknown): “, 2001] and then in magnetic tunnel junctions with low-resistance tunnel barriers [Huai et al., 2004; Fuchs et al., 2004; Sato et al., 2014].”
Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications (2017, background): “Thanks to progress made in the growth of MTJ, particularly with regard to reducing the thickness of the oxide barrier while maintaining a large TMR amplitude, STT switching was obtained in MTJs (Fuchs et al., 2004; Huai et al., 2004).”
Quantitative measurement of voltage dependence of spin-transfer torque in MgO-based magnetic tunnel junctions (2008, unknown): “This provides a potentially useful method to revers”