High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes

By M. Schmidt, Kwangchoong Kim, H. Sato, N. Fellows, H. Masui, Shuji Nakamura, Steven P. DenBaars, J. Speck. 2007

241 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/d82a2ee482f1ea546d45220bef18ed4e5483ccce

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Steven P. DenBaars
2. Umesh K. Mishra
3. Shuji Nakamura

In Condensed Matter Physics

1. Steven P. DenBaars
2. Umesh K. Mishra
3. Shuji Nakamura
4. H. Masui
5. J. Speck
6. B. Baliga
7. Srabanti Chowdhury

In Mechanics of Materials

1. Steven P. DenBaars
2. Umesh K. Mishra
3. Shuji Nakamura

Citations in the corpus

• Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting (2013, background): “To date, relatively high efficiency violet [15], blue-violet [16], blue [17], and green [18], [19] LEDs have been demonstrated on free-standing nonpolar or semipolar GaN.”
• Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges (2010, background): “The external quantum efficiency was determined to be ∼40% in the early study [71].”
• Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells (2009, background): “External quantum efficiencies (EQEs) of nonpolar LEDs grown on m-plane native GaN substrates have been reported and the peak EQE of the LED operating at λ ∼ 407 nm was reported to be ∼40% [93], [94].”