Current transport in metal/hafnium oxide/silicon structure

By Wenjuan Zhu, T. Ma, T. Tamagawa, Jae-Joon Kim, Y. Di. IEEE Electron Device Letters, 2002

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Electronic properties of hafnium oxide: A contribution from defects and traps (2016, unknown): “[24,53,85,99,100], who evaluated the trap ionization energies in HfO2, assumed that the traps under study were electron traps.”
On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology (2012, background): “In Part II of the paper [14], we corroborate the simulation results with the experimental data of HfOx-based RRAM devices [15], [16], such as dc I–”