Nonvolatile resistive switching in graphene oxide thin films

By Congli He, F. Zhuge, Xingtai Zhou, M. Li, G. Zhou, Yequn Liu, Jixia Wang, Bo Chen, W. Su, Z. Liu and 3 more. 2009

239 citations recorded by the source corpus.

Subfields: Cellular and Molecular Neuroscience, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/0097211790b1f340ba977489a4e85902c5f49587

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Zhaoping Liu
2. Xufeng Zhou

Citations in the corpus

• Mechanism of nonvolatile resistive switching in graphene oxide thin films (2011, methodology): “Recently, we observed reliable and reproducible nonvolatile RS behaviors in GO thin films prepared by the vacuum filtration method [25].”
• Flexible Resistive Switching Memory Device Based on Graphene Oxide (2010, unknown): “Very recently, a letter reported that graphene oxide could show resistive switching characteristics and attributed this switching to the desorption/absorption process of oxygen-related groups and the diffusion of the top electrode [3].”