NBTI enhancement by nitrogen incorporation into ultrathin gate oxide for 0.10-/spl mu/m gate CMOS generation
By N. Kimizuka, K. Yamaguchi, K. Imai, T. Iizuka, C. Liu, R. Keller, T. Horiuchi. 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104), 2000
161 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/cd2eba25d3caec602c40212037dab00e0b14dd37
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In Electrical and Electronic Engineering
- Souvik Mahapatra
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Citations in the corpus
- Analysis of NBTI Degradation- and Recovery-Behavior Based on Ultra Fast VT-Measurements (2006, unknown): “1eV in agreement with previous studies [12].”
- A Comparative Study of Different Physics-Based NBTI Models (2013, methodology): “A LTHOUGH first reported in the 1960s [1], negative bias temperature instability (NBTI) has become a serious reliability issue in recent years for p-MOSFETs having silicon dioxide (SiO2), silicon oxynitride (SiON) [2]–[11], and SiON/high-K (HK) bilayer gate insulators [12]–[14].”
- A comprehensive framework for predictive modeling of negative bias temperature instability (2004, unknown): “The time dependence of the threshold voltage shift (AVT) is found to follow a fractional power law (AVT cy [l], [2], [ 3 ].”