An Updated Perspective of Single Event Gate Rupture and Single Event Burnout in Power MOSFETs

By J. Titus. IEEE Transactions on Nuclear Science, 2013

142 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Hardware and Architecture

View Paper: https://www.semanticscholar.org/paper/773b5470f35df678a78b6c4e8f1ef76d9813f195

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In Electrical and Electronic Engineering

1. D. Fleetwood

Citations in the corpus

• Single-Event Burnout Mechanisms in SiC Power MOSFETs (2018, background): “These failures are well understood with the latter linked to the parasitic bipolar junction transistor (BJT), which is an integral part of the device structure [2]–[5].”