Artificial synapse network on inorganic proton conductor for neuromorphic systems

By L. Zhu, C. Wan, L. Guo, Yi Shi, Qing Wan. Nature Communications, 2013

755 citations recorded by the source corpus.

The basic units in our brain are neurons, and each neuron has more than 1,000 synapse connections. Synapse is the basic structure for information transfer in an ever-changing manner, and short-term plasticity allows synapses to perform critical computational functions in neural circuits. Therefore, the major challenge for the hardware implementation of neuromorphic computation is to develop artificial synapse network. Here in-plane lateral-coupled oxide-based artificial synapse network coupled by proton neurotransmitters are self-assembled on glass substrates at room-temperature. A strong lateral modulation is observed due to the proton-related electrical-double-layer effect. Short-term plasticity behaviours, including paired-pulse facilitation, dynamic filtering and spatiotemporally correlated signal processing are mimicked. Such laterally coupled oxide-based protonic/electronic hybrid artificial synapse network proposed here is interesting for building future neuromorphic systems. Realizing artificial synapses that mirror those found in the brain is a major challenge. Here, the authors demonstrate the fabrication of a laterally coupled oxide-based artificial synapse via a self-assembling process.

Subfields: Cellular and Molecular Neuroscience, Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/9753ed1a41aac79e646b0380a1b75d48c4994dbd

Citations in the corpus

• Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing (2020, neutral): “Emerging memory devices such as memristors 6 , memtransis-tors 7 , phase change memory 8 , electrical double-layer transistors 9 , two-dimensional (2D) heterojunction devices 10 , and ferroelectric fi eld effect transistors (FeFETs) 11 are used to perform analog computation in an attempt to break…”
• Electric double-layer transistors: a review of recent progress (2015, neutral): “Reproduced from [193] with permission from Nature Publishing Group 5668 J Mater Sci (2015) 50:5641–5673”