On Enhanced Miller Capacitance Effect in Interband Tunnel Transistors

By S. Mookerjea, R. Krishnan, Suman Datta, Vijay Narayanan. IEEE Electron Device Letters, 2009

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Tunnel field-effect transistors as energy-efficient electronic switches (2011, background): “A specific characteristic of TFETs that influences their transient response was reported by Mookerjea et al”
On the Possibility of Obtaining MOSFET-Like Performance and Sub-60-mV/dec Swing in 1-D Broken-Gap Tunnel Transistors (2010, background): “It is also seen that all TFETs can have a large drain-originating channel capacitance (Cch−D) at higher gate biases [18], [36].”
Low-Voltage Tunnel Transistors for Beyond CMOS Logic (2010, unknown): “The heavy doping and low gate-to-drain bias in the TFET also leads to a higher gate-to-drain Miller capacitance than in the MOSFET [91].”
Tunnel Field Effect Transistor With Raised Germanium Source (2010, background): “In the ON state, the total gate capacitance is dominated by the gate-to-(n) drain capacitance (CGD) due to the inversion layer of the electrons at the gate dielectric interface in the channel region [9].”