Gated-Vdd: a circuit technique to reduce leakage in deep-submicron cache memories

By Michael D. Powell, Se-Hyun Yang, Babak Falsafi, Kaushik Roy, T. N. Vijaykumar. International Symposium on Low Power Electronics and Design, 2000

875 citations recorded by the source corpus.

Deep-submicron CMOS designs have resulted in large leakage energy dissipation in microprocessors. While SRAM cells in on-chip cache memories always contribute to this leakage, there is a large variability in active cell usage both <italic>within</italic> and <italic>across</italic> appliðcations. This paper explores an integrated architectural and circuit-level approach to reducing leakage energy dissipation in instrucðtion caches. We propose, <italic>gated-V<subscrpt>dd</subscrpt>,</italic> a circuit-level technique to gate the supply voltage and reduce leakage in unused SRAM cells. Our results indicate that gated-V<subscrpt>dd</subscrpt> together with a novel resizable cache architecture reduces energy-delay by 62% with minimal impact on performance.

Subfields: Electrical and Electronic Engineering, Hardware and Architecture

View Paper: https://www.semanticscholar.org/paper/91a6e8ae9c5fb90423e8d4ae216bd45807d44047

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In Electrical and Electronic Engineering

  1. Karthik Sankaranarayanan
  2. Kevin Skadron
  3. Mircea R. Stan
  4. David T. Blaauw
  5. Pradip Bose
  6. Nam Sung Kim
  7. David M. Brooks
  8. Margaret Martonosi

In Hardware and Architecture

  1. Karthik Sankaranarayanan
  2. Kevin Skadron
  3. Mircea R. Stan
  4. David T. Blaauw
  5. Pradip Bose
  6. Nam Sung Kim
  7. Frank Vahid
  8. David M. Brooks

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