Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes
By K. Mcgroddy, A. David, E. Matioli, M. Iza, Shuji Nakamura, Steven P. DenBaars, J. Speck, C. Weisbuch, E. Hu. 2008
174 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics
View Paper: https://www.semanticscholar.org/paper/83656768176b30581f68ca4515edf9d9d234954e
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In Atomic and Molecular Physics, and Optics
In Condensed Matter Physics
Citations in the corpus
- III-Nitride Photonics (2010, background): “Recently, the use of photonic crystal have also resulted in significant enhancement in nitride LEDs [56], [57], with encapsulated light extraction efficiency as high as 73% [56].”
- Photonic crystal LEDs – designing light extraction (2009, background): “In recent years numerous publications [2–24] investigated the application of photonic crystals (PhCs) for addressing this issue.”
- LEDs for Solid-State Lighting: Performance Challenges and Recent Advances (2009, methodology): “InGaN MQW region [81], [82] or using thin-film structures [83].”
- Metal assisted chemical etching for high aspect ratio nanostructures: A review of characteristics and applications in photovoltaics (2012, background): “Many applications including solar cells, thermoelectrics, and other optoelectronics that involve structures that are currently fabricated by dry etch or bottom-up growth and assembly techniques, can benefit from this facile fabrication technique tremendously, including GaN based solar cells [78] and”