Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction

By J. Mathon, A. Umerski. 2001

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Towards Oxide Electronics: a Roadmap (2019, background): “The mechanism of the ‘‘giant TMR effect” in the MgObased MTJs is the additional spin filtering effect facilitated by the spindependent coherent tunneling through an epitaxial or a highly textured MgO (0 0 1) barrier [509,510].”
Development of the magnetic tunnel junction MRAM at IBM: From first junctions to a 16-Mb MRAM demonstrator chip (2006, background): “Meanwhile, the same author (S. S. P. P.) and his collaborators had been investigating predictions of much higher TMR values that had been made independently by Butler et al. [44] and by Mathon and Umerski [45] for epitaxial [001] Fe/MgO/Fe tunnel junctions.”
Magnetic Tunnel Junctions for Spintronic Memories and Beyond (2007, background): “An MTJ that is composed of Co40Fe40B20(2)/Ni81Fe19(3) free layer showed a low TMR ratio of 65% at Ta = 300 ◦C, presumably because CoFeB under NiFe does not form a highly oriented (001) texture [77].”
Spin-transfer effects in nanoscale magnetic tunnel junctions (2004, background): “emission is a spin-flip process that may reduce TMR(V ) [14, 28].”