Development of the magnetic tunnel junction MRAM at IBM: From first junctions to a 16-Mb MRAM demonstrator chip

By William J. Gallagher, Stuart S. P. Parkin. IBM Journal of Research and Development, 2006

329 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Condensed Matter Physics

View Paper: https://www.semanticscholar.org/paper/5908c96d47b6252e8083afaf4d50f7858eca2afa

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. D. Ralph
2. Robert A. Buhrman
3. E. Ryan
4. S. Sze
5. S. Kiselev
6. Tseung-Yuen Tseng
7. I. Krivorotov
8. J. S. Meena

In Biomedical Engineering

1. S. Sze
2. S. Kiselev
3. Tseung-Yuen Tseng
4. I. Krivorotov
5. J. S. Meena
6. D. Ralph
7. N. Emley
8. J. Sankey

In Condensed Matter Physics

1. S. Kiselev
2. I. Krivorotov
3. D. Ralph
4. Jordan A. Katine
5. N. Emley
6. J. Sankey
7. Robert A. Buhrman

Citations in the corpus

• Spin-transfer effects in nanoscale magnetic tunnel junctions (2004, methodology): “The idea of using MTJ bits as the basis for a simultaneously non-volatile, highspeed, dense, and low-power memory has been under development for over a decade [22, 80, 81].”
• Overview of emerging nonvolatile memory technologies (2014, background): “MRAM, first developed by IBM in the 1970s [85], is expected to replace DRAM as the memory standard in electronics.”