Role of Oxygen Vacancies in Cr‐Doped SrTiO3 for Resistance‐Change Memory
By Dr. Markus Janousch, D. Meijer, D. Staub, D. Bernard, Delley, Dr. Siegfried F. Karg, B. P. Andreasson. 2007
509 citations recorded by the source corpus.
A high density of oxygen vacancies has been found in an experiment to determine the path of electrical conduction in Cr-doped SrTiO3 memory cells. The Cr acts as a seed for the localization of oxygen vacancies, leading to a statistically homogeneous distribution of charge carriers within the path. This warrants a controllable doping profile and improved device scaling down to the nanometer scale. The combination of laterally resolved micro-X-ray absorption spectroscopy and thermal imaging concludes that the resistance switching in Cr-doped SrTiO3 originates from an oxygen-vacancy drift to/from the electrode that was used as anode during the conditioning process. The experiments shows that this oxygen vacancy concept is crucial for the entire class of transition-metal-oxide-based bipolar resistance-change memory.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/6dcd339f1f2d9b6e091f011cb525fffed3032c36
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In Electrical and Electronic Engineering
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In Materials Chemistry
Citations in the corpus
- Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions (2009, background): “The analysis of Cr K-edge XANES spectra [14] suggested that Cr ions play the role of a seed for the formation of the aforesaid conducting filaments.”
- Resistive switching memories based on metal oxides: mechanisms, reliability and scaling (2016, methodology): “It was possible to reveal this via several different techniques, including CAFM measurements [68], area dependence of the LRS resistance [69], infrared thermal imaging of the device [70], and in situ microscopic imaging of the device during switching by transmission electron microscopy (TEM) [64, 71”
- Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling (2012, background): “In bipolar RRAM, the voltage for set and reset must have opposite polarities, thus evidencing the role of voltage-driven ion migration [2], [6], [7], [10], [13], [17].”