RF Performance and Small-Signal Parameter Extraction of Junctionless Silicon Nanowire MOSFETs
By Seongjae Cho, K. Kim, Byung-Gook Park, I. Kang. IEEE Transactions on Electron Devices, 2011
195 citations recorded by the source corpus.
Subfields: Biomedical Engineering, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/c1216c0f0bfd97319ddd3a947b584004a1563bd5
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Biomedical Engineering
In Electrical and Electronic Engineering
- Suresh Gundapaneni
- Anil Kottantharayil
- S. Ganguly
- Kota Murali
- Mohit Bajaj
- R. Pandey
- Mansun Chan
- Roy P. Paily
Citations in the corpus
- A Dual-Material Gate Junctionless Transistor With High- $k$ Spacer for Enhanced Analog Performance (2014, background): “However, JLTs suffer from lesser drain current and transconductance compared with inversion mode MOSFETs due to high doping concentration in the channel region [1], [5], [6].”
- A Junctionless Nanowire Transistor With a Dual-Material Gate (2012, methodology): “reported in [5] is used as a reference for comparison.”
- Effect of Band-to-Band Tunneling on Junctionless Transistors (2012, background): “[15], effects of strain on JLT performance [16], ballistic transport at short channel lengths [17], and radio-frequency performance analysis [18].”