Introduction to flash memory

By R. Bez, E. Camerlenghi, A. Modelli, A. Visconti. Proceedings of the IEEE, 2003

784 citations recorded by the source corpus.

Subfields: Computer Networks and Communications, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/58c275dc0721f78b55d808bfe542a911e869dc0d

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Computer Networks and Communications

1. Onur Mutlu
2. Jeremie S. Kim
3. Saugata Ghose
4. Yixin Luo
5. Yoongu Kim
6. Yu Cai
7. Erich F. Haratsch
8. Donghyuk Lee

In Electrical and Electronic Engineering

1. Onur Mutlu
2. Jeremie S. Kim
3. Yoongu Kim
4. Saugata Ghose
5. Donghyuk Lee
6. Yixin Luo
7. Yu Cai
8. Erich F. Haratsch

Citations in the corpus

• Retrospective: Flipping Bits in Memory Without Accessing Them: An Experimental Study of DRAM Disturbance Errors (2023, neutral): “Disturbance errors are a general class of reliability problem that a ffl icts not only DRAM, but also other memory and storage technologies: SRAM [16, 26, 40], flash [10, 12, 13, 19, 25], and hard-disk [36, 63, 68].”
• Error Characterization, Mitigation, and Recovery in Flash-Memory-Based Solid-State Drives (2017, methodology): “The threshold voltage of a floating gate transistor is controlled through the injection and ejection of electrons through the tunnel oxide of the transistor, which is enabled by the Fowler–Nordheim (FN) tunneling effect [5, 52, 156].”
• Radiation Effects in Flash Memories (2013, background): “1 depicts a typical structure of a charge-based non-volatile cell [3].”
• Flipping bits in memory without accessing them: An experimental study of DRAM disturbance errors (2014, background): “Disturbance errors are a general class of reliability problem that a✏icts not only DRAM, but also other memory and storage technologies: SRAM [16, 26, 40], flash [10, 12, 13, 19, 25], and hard-disk [36, 63, 68].”
• Error patterns in MLC NAND flash memory: Measurement, characterization, and analysis (2012, methodology): “NAND flash memory [1] has been widely used as a storage medium for many systems such as laptops, PDAs, and mobile phones because of its high performance, large storage density, non-volatility and low power consumption.”
• Low-cost and nanoscale non-volatile memory concept for future silicon chips (2005, background): “Flash memories are currently used as non-volatile memory in stand-alone and embedded chips with great commercial succes”
• Overview of emerging nonvolatile memory technologies (2014, background): “For the past three and a half decades in existence, the family of semiconductor memories has expanded greatly and achieved higher densities, higher speeds, lower power, more functionality, and lower costs [3,6,7].”