Deep-ultraviolet transparent conductive β-Ga2O3 thin films
By M. Orita, H. Ohta, M. Hirano, Hideo Hosono. 2000
916 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment
View Paper: https://www.semanticscholar.org/paper/567ce570961b7a12b8956a80d8616a9fb64fa6fa
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In Condensed Matter Physics
In Electronic, Optical and Magnetic Materials
- Z. Galazka
- Akito Kuramata
- Kohei Sasaki
- Masataka Higashiwaki
- H. von Wenckstern
- Shigenobu Yamakoshi
- Matthew D. McCluskey
In Renewable Energy, Sustainability and the Environment
Citations in the corpus
- Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV (2018, background): “9 eV [1], a high expected breakdown electric field up to 8 MV/cm [2] and a decent intrinsic electron mobility limit of 250 cm2/Vs [3], which enables high-voltage and high-power operation.”