Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors

Applied Physics A, 2012

180 citations recorded by the source corpus.

Subfields: Cellular and Molecular Neuroscience, Cognitive Neuroscience, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/2c012e068199b90bab7b0569a0f6df7378579f7c

Citations in the corpus

• State of the art of metal oxide memristor devices (2016, background): “In some cases, a thermochemical process is also described in addition to these two main mechanisms, to further justify some structural and stoichiometric modification changes in the insulator layer as a result of current-induced thermal effects [12, 13].”