High Performance Electrolyte Gated Carbon Nanotube Transistors

By S. Rosenblatt, Y. Yaish, Jiwoong Park, J. Gore, V. Sazonova, Paul L. McEuen. 2002

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Electric double-layer transistors: a review of recent progress (2015, unknown): “In comparison, gating electrolyte designed by McEuen and coworkers is an effective approach to achieving high mobility and transconductance [51].”
High-performance dual-gate carbon nanotube FETs with 40-nm gate length (2005, methodology): “For our simple arguments, we use m [10], [11] in the following discussions.”
Properties and applications of high-mobility semiconducting nanotubes (2004, background): “Similarly, high conductances in semiconducting nanotubes (Rosenblatt et al 2002, Javey et al 2003) indicate mean-free-paths of at least hundreds of nanometres.”
Future lab-on-a-chip technologies for interrogating individual molecules (2006, background): “Semiconductor nanowires and carbon nanotubes, for example, are being studied as sensor component”
High-performance carbon nanotube field-effect transistor with tunable polarities (2005, background): “as the gate [12], [13]; and 4) reducing contact resistance by choosing proper contact metals [14] or post-process treatments [15].”
AC performance of nanoelectronics: towards a ballistic THz nanotube transistor (2004, methodology): “Transconductances up to 20 lS have been measured [ 12 ], using an aqueous gate geometry.”