GaN Transistors for Efficient Power Conversion

By A. Lidow, M. D. Rooij, J. Strydom, D. Reusch, J. Glaser. 2019

602 citations recorded by the source corpus.

This timely second edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/36d97825ac8ea8cfd35675cf7b6fc473b55b891f

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Citations in the corpus

Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs (2017, background): “RECENTLY, GaN-based power transistors have received great attention in power electronics applications, due to the advantages of GaN over the conventional silicon [1] and to the possibility of manufacturing these devices at a comparable or lower cost than their aging Si-based competitors [2].”
Recent Advances in GaN‐Based Power HEMT Devices (2021, background): “, CGD and CDS), which may compromise the high frequency and switching performance of the device.[245] Therefore, a few unique FP structures were proposed, such as floating grating FPs[246] and air-bridge FP,[247] to reduce the parasitic capacitance.”
Investigation of Gallium Nitride Devices in High-Frequency LLC Resonant Converters (2017, methodology): “The first commercially available enhancement mode GaN FETs (eGaN FETs) had a blocking voltage below 200 V [4].”
Materials and processing issues in vertical GaN power electronics (2017, background): “Lateral power transistors and diodes based on AlGaN/GaN heterostructures have already demonstrated excellent electrical characteristics [4–9], and enhancement-mode GaN products are commercially available since June 2009 [10].”
Wide Bandgap Devices in AC Electric Drives: Opportunities and Challenges (2019, background): “The figure of merit (FOM) is defined as the product of the on-state resistance and gate charge for a switch, so a lower FOM corresponds to better performance [38].”
GaN-on-Si Power Technology: Devices and Applications (2017, background): “However, GaN transistors are still several orders of magnitude away from GaN’s theoretical performance limits [70].”
Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs (2019, unknown): “achieved by channel conduction [31]–[33].”
A 6.7-GHz Active Gate Driver for GaN FETs to Combat Overshoot, Ringing, and EMI (2018, methodology): “Minimum allowable gate resistance versus gate loop inductance for a GaN FET with 1-nF input capacitance under conventional (according to [21], eq.”