Total ionizing dose effects in MOS oxides and devices

By T. Oldham, F. B. McLean. 2003

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Evolution of Total Ionizing Dose Effects in MOS Devices With Moore’s Law Scaling (2018, background): “The dominant radiationinduced oxide trap in SiO2 is an O vacancy defect (E’ center), and the dominant radiation-induced interface-trap is a dangling Si bond at the Si/SiO2 interface (Pb center) [3], [5], [8], [37].”
Radiation-Induced Short Channel (RISCE) and Narrow Channel (RINCE) Effects in 65 and 130 nm MOSFETs (2015, background): “[23], which contributes to a decrease of their compensation.”
Single Event Transients in Digital CMOS—A Review (2013, background): “Ionizing radiation is known to degrade the electrical characteristics of NMOS and PMOS transistors because of the radiation-induced charge trapped in oxide films and at oxide-silicon interfaces [80].”
Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs (2012, background): “in rads, and q is the electronic charge [18], [19].”