Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV

By H. Ohta, N. Kaneda, F. Horikiri, Yoshinobu Narita, Takehiro Yoshida, T. Mishima, Tohru Nakamura. IEEE Electron Device Letters, 2015

187 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/fac9225fc0e4a54d1668246500dbd873511662d8