A Graphene Field-Effect Device

By M. Lemme, T. Echtermeyer, M. Baus, H. K. A. M. C. Aachen, A. GmbH, Aachen, Germany, Institute of Semiconductor Electronics, Rwth Aachen University. IEEE Electron Device Letters, 2007

957 citations recorded by the source corpus.

In this letter, a top-gated field-effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from the top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/9b785988395ae528d0edf1ecd57d8336e0d0a677

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Citations in the corpus

Simulation of Graphene Nanoribbon Field-Effect Transistors (2007, background): “Experiments on graphene-based devices [7] and Graphene Nan oRibbon FETs [8] (GNR-FETs) have appeared only very recently, and demonstrate the capability to modul ate the conductance of a graphene channel by 30% with a top gate [7] and by a factor 6 with a backgate [8] at room tempe rature.”
Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor (2018, background): “This leads to extremely high charge carrier mobilities for both electrons and holes in graphene [251,252].”
Graphene Photonics and Optoelectroncs (2010, background): “This, combined with near-ballistic transport at room temperature, makes graphene a potential material for nanoelectronic”
NO2 and humidity sensing characteristics of few-layer graphenes (2009, background): “r detecting very small concentration of NH3, NO2 and other gases [11, 12, 13, 14, 15]. Recent studies on the interaction of graphene with gas molecules have indicated that it can act as a good sensor [16, 17, 18, 19, 20, 21, 22, 23, 24]. Schedin and co-workers [22] have shown that the increase in th”
Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates (2009, background): “ated graphene layers on top of a SiO2 surface [ 5 ], [6], while there are several reports on graphene FETs using epitaxialgraphene materials grown by graphitization of SiC substrates [7]–[10].”
Nonvolatile Switching in Graphene Field-Effect Devices (2008, background): “[4]-[8], [17]) and translates to a channel”
Resistivity of Graphene Nanoribbon Interconnects (2009, result): “Also shown are previously published data from [2], [3], [10]–[12].”