$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric
By Han Liu, Peide D. Ye. IEEE Electron Device Letters, 2011
187 citations recorded by the source corpus.
We demonstrate atomic-layer-deposited (ALD) high-<i>k</i> dielectric integration on 2-D layer-structured molybdenum disulfide (MoS<sub>2</sub>) crystals and MoS<sub>2</sub> dual-gate n-channel MOSFETs with ALD Al<sub>2</sub>O<sub>3</sub> as the gate dielectric. Our <i>C</i>- <i>V</i> study of MOSFET structures shows good interface between 2-D MoS<sub>2</sub> crystal and ALD Al<sub>2</sub>O<sub>3</sub>. Maximum drain currents using back gates and top gates are measured to be 7.07 and 6.42 mA/mm, respectively, at <i>V</i><sub>ds</sub> = 2 V with a channel width of 3 μm, a channel length of 9 μm, and a top-gate length of 3 μm. We achieve the highest field-effect mobility of electrons using back-gate control to be 517 cm<sup>2</sup>/V·s. The highest current on/off ratio is over 10<sup>8</sup>.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/c16ba18497ccfe457d50dfd03ca93d1fa951fdd5