A. M. Ozbek

IEEE Electron Device Letters · 2011

A researcher in the Science corpus: 1 paper; trusts 0 researchers and is trusted by 1 researcher here, as inferred from the citation graph.

Who trusts A. M. Ozbek overall

  1. B. Baliga

Papers from A. M. Ozbek's perspective

Ordered by how strongly the researchers A. M. Ozbek trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Fundamentals of Power Semiconductor Devices
  2. High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates (IEEE Electron Device Letters)
  3. I and i
  4. Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs (IEEE Electron Device Letters)
  5. High breakdown GaN HEMT with overlapping gate structure (IEEE Electron Device Letters)
  6. Electrical breakdown in atmospheric air between closely spaced (0.2 /spl mu/m-40 /spl mu/m) electrical contacts (Proceedings of the Forth-Seventh IEEE Holm Conference on Electrical Contacts (IEEE Cat. No.01CH37192))

Their papers