High hole mobility in boron doped diamond for power device applications

By P. Volpe, J. Pernot, P. Muret, F. Omnès. 2009

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Surface transfer doping of diamond: A review (2021, background): “Reported hole mobility in lightly boron-doped diamond with increasing temperature (left) [8,29,30,33,34] and representation of substi-”
Diamond power devices: state of the art, modelling, figures of merit and future perspective (2019, background): “Detailed analysis of the mobility dependence versus doping level concerning phosphorus-doped n-type [66] and boron-doped p-type [29, 69, 70] materials have been reported.”