Material removal mechanism in chemical mechanical polishing: theory and modeling

By Jianfeng Luo, David A. Dornfeld. 2001

655 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Mechanical Engineering

View Paper: https://www.semanticscholar.org/paper/fed24cad3359c3e11f63c5a2be7ec5ffa1b582fd

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. V. Jain
2. Ashok Kumar
3. A. Sikder
4. P. Zantye
5. G. Subhash
6. Abhijit Chandra
7. S. Guha
8. G. Fu

In Biomedical Engineering

1. V. Jain
2. Ashok Kumar
3. A. Sikder
4. P. Zantye
5. David A. Dornfeld
6. G. Subhash
7. Abhijit Chandra
8. S. Guha

In Mechanical Engineering

1. V. Jain
2. Ashok Kumar
3. A. Sikder
4. P. Zantye
5. David A. Dornfeld
6. G. Subhash
7. Abhijit Chandra
8. S. Guha

Citations in the corpus

• Chemical mechanical planarization for microelectronics applications (2004, methodology): “Change in material removal mechanism is expected to be the reason of this phenomenon [123].”
• Mechanical properties of nanoparticles: basics and applications (2014, neutral): “the hydrodynamic model and the solid contact model [266, 267].”
• Material Removal Mechanisms in Lapping and Polishing (2003, background): “148: G99-G109 [40] Yu T.K., Yu C.C. and M. Orlowski , in Proceeding of the 1993 International Electron Devices Meeting (1994), page 35.4.1 [41] Fu et al. (2001) op. cit [42] Luo J. and Dornfeld D. A. Material Removal Mechanism in Chemical Mechanical Polishing: Theory and Modeling”.”
• Synthesis of CeO2-coated SiO2 nanoparticle and dispersion stability of its suspension (2008, background): “The progressively decreasing feature size of the circuit comonents has tremendously increased the need for global surface lanarization [1–6].”
• ABRASIVE-BASED NANO-FINISHING TECHNIQUES: AN OVERVIEW (2008, methodology): “To explain material removal in CMP, abrasion mechanism in solid-solid contact mode in CMP has been proposed by Luo and Dornfeld (2001).”
• A plasticity-based model of material removal in chemical-mechanical polishing (CMP) (2001, methodology): “Luo and Dornfeld [25] have also developed a material removal model for CMP based on the”
• Effects of abrasive size distribution in chemical mechanical planarization: modeling and verification (2003, methodology): “The relationship between the down pressure, contact pressure and contact area can be obtained based on a contact model as shown in [8].”