A plasticity-based model of material removal in chemical-mechanical polishing (CMP)
By G. Fu, Abhijit Chandra, S. Guha, G. Subhash. 2001
168 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Mechanical Engineering
View Paper: https://www.semanticscholar.org/paper/d03af7e05ff616b1c1f98dc86231ad0e95447eb1
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In Atomic and Molecular Physics, and Optics
In Biomedical Engineering
In Mechanical Engineering
Citations in the corpus
- Effects of abrasive size distribution in chemical mechanical planarization: modeling and verification (2003, background): “In the “non-contact mode” proposed in [10] and [14], there is no need for abrasives to be closely packed to each other, which may be t case for a hard pad due to the small pad deformation [14].”
- Material Removal Mechanisms in Lapping and Polishing (2003, background): “148: G99-G109 [40] Yu T.K., Yu C.C. and M. Orlowski , in Proceeding of the 1993 International Electron Devices Meeting (1994), page 35.4.1 [41] Fu et al. (2001) op. cit [42] Luo J. and Dornfeld D. A. Material Removal Mechanism in Chemical Mechanical Polishing: Theory and Modeling”.”