Novel colossal magnetoresistive thin film nonvolatile resistance random access memory (RRAM)
By W. Zhuang, W. Pan, B. Ulrich, J.J. Lee, L. Stecker, A. Burmaster, D.R. Evans, S. Hsu, M. Tajiri, A. Shimaoka and 8 more. Digest. International Electron Devices Meeting,, 2002
153 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/f9b7d13bd5e9c4ccf863a8874893c64a359b6316
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Citations in the corpus
- Effect of Top Electrode Material on Resistive Switching Properties of $\hbox{ZrO}_{2}$ Film Memory Devices (2007, unknown): “Due to these excellent characteristics, a number of metal oxides, such as SrZrO3 [1], Pr1−xCaxMnO3 [2], [3], Nb2O5 [4], TiO2 [5], [6], NiO [7], and ZrO2 [8], have been studied.”
- Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications (2005, unknown): “Among theses new memory devices, resistance RAM (RRAM) shows various advantages such as simple device structure, low power operation, high density integration, high-speed operations, and compatibility of current CMOS process [ 4 ]–[6].”
- Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$ (2008, background): “seem to be applicable for ReRAM, including ferromagnetic materials [1], perovskite oxide [2], [3], polymer [4], and binary transition-metal oxides [5]–[14].”
- Resistive Random Access Memory (ReRAM) Based on Metal Oxides (2010, methodology): “Zhuang et al. fabricated a 64-b perovskite-oxide-based ReRAM memory array, using a 0.5-� m complementary metal–oxide–semiconductor (CMOS) process [ 8 ].”