Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated

By Jacek Rabkowski, Dimosthenis Peftitsis, Hans-Peter Nee. IEEE Industrial Electronics Magazine, 2012

391 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/7f6ba123b022d1ac3ebcd0e285e0f63249575212

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In Electrical and Electronic Engineering

1. S. Munk‐Nielsen
2. Bernard H. Stark
3. Xiongfei Wang
4. Frede Blaabjerg

Citations in the corpus

• An Experimental Investigation of the Tradeoff between Switching Losses and EMI Generation With Hard-Switched All-Si, Si-SiC, and All-SiC Device Combinations (2014, background): “become commercially available at this voltage rating [6]–[8], along with the first series-production, high-power (1200 V,”
• Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs (2016, background): “Compared with Silicon (Si) insulated gate bipolar transistors, SiC MOSFETs have no tail current due to their unipolar structure and thus allowing reduced switching losses and higher switching frequency [5], [7]–[10].”