Survey on High-Temperature Packaging Materials for SiC-Based Power Electronics Modules
By L. Coppola, D. Huff, Fred Wang, Rolando Burgos, Dushan Boroyevich. 2007 IEEE Power Electronics Specialists Conference, 2007
140 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/efeeb7b758daafb177d41c67ec3bd31f7d633700
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In Electrical and Electronic Engineering
- Paolo Mattavelli
- D. Henry
- Zheng Chen
- Laurent Mendizabal
- Sheldon S. Williamson
- Vemal Raja Manikam
- Kuan Yew Cheong
- Deepak Ronanki
Citations in the corpus
- Thermal transport in amorphous materials: a review (2016, background): “used or proposed for such applications as heat spreading components for power electronics [95], thermally conductive composites [96], plasmonics (surface phonon poloriton) [97], harsh environment MEMS components [98–100], etc In the”
- Survey of High-Temperature Reliability of Power Electronics Packaging Components (2015, background): “Even if some survey papers have addressed the high-temperature packaging materials [12], [13], reliability survey on the latest results of those components has not been addressed yet.”
- Die Attach Materials for High Temperature Applications: A Review (2011, background): “[14] pointed out another silver filled glass die attach product by Loctite called QMI 3555R, which is extremely resistant to degradation during temperature cycling from −65 °C to 150 °C.”
- A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency Applications (2014, background): “The main features of these ceramics are compared in Table III [37], [38].”
- Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective (2023, background): “The encapsulation serves as a crucial passivation layer and also provides environmental protection to the device [192].”
- Comprehensive Topological Overview of Rolling Stock Architectures and Recent Trends in Electric Railway Traction Systems (2017, background): “power modules can operate at a high junction temperature of 250 °C [140], at an ambient temperature of 100 °C [141],”