A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency Applications

By Zheng Chen, Yiying Yao, Dushan Boroyevich, K. Ngo, Paolo Mattavelli, K. Rajashekara. IEEE transactions on power electronics, 2014

249 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/aa3b64d3800dcf9276ca8d022c4236d75e53aba3

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In Electrical and Electronic Engineering

1. Zheyu Zhang
2. Fei Wang

Citations in the corpus

• Overview of Silicon Carbide Technology: Device, Converter, System, and Application (2016, background): “5 Virginia Tech [78] Research & development Power module integrated with gate drive in board level Phase-leg High temperature, decoupling capacitor built in, low parasitic and fast switching”
• A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs (2016, unknown): “30 The cost of single device is not yet competitive but benefits 31 can become dominant at application level where compact and 32 highly efficient systems could be realized [4], [5].”
• A Review of SiC Power Module Packaging Technologies: Challenges, Advances, and Emerging Issues (2020, methodology): “Actual operations of SiC module package under HT conditions were demonstrated [82], [83].”