Exponential ionic drift: fast switching and low volatility of thin-film memristors

By Dmitri B. Strukov, R. Williams. 2009

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Stochastic Memristive Devices for Computing and Neuromorphic Applications (2013, background): “The strong voltage dependence of (average) switching time is expected within the filament formation picture since the energy barriers for both the oxidation and the ion transport processes are field-dependent (the reduction processes of the ions is not thought to be the rate-limiting process) (5,18)”
Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors (2012, methodology): “2 eV (which would be required for nonvolatile memory effect [12, 26] and somewhat typical for oxygen vacancies in crystalline TiO2 [46]) and decreases with increasing temperature.”
Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM) (2011, background): “For example, in a uniform isotropic dielectric, the local field experienced by the ions can be tens of times larger than the averaged field [30].”