Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

By Seung‐Eon Ahn, Myoung‐Jae Lee, Young-soo Park, Bo Soo Kang, Chang Bum Lee, Ki-Hwan Kim, Sun-ok Seo, D.-S. Suh, Dong-Chirl Kim, J. Hur and 8 more. 2008

157 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/ea3be7f68ceb442cca1e420efe1b12172733110c

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Daniele Ielmini
2. R. Bruchhaus
3. Rainer Waser
4. H. Philip Wong
5. Ilia Valov
6. Shimeng Yu
7. Michael N. Kozicki
8. Federico Nardi

In Polymers and Plastics

1. R. Bruchhaus
2. Rainer Waser
3. Daniele Ielmini
4. H. Philip Wong

Citations in the corpus

• Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth (2011, background): “severe challenges need to be addressed and solved, including switching variability [2], reset current reduction [3]–[6], and reliability [7]–[9].”
• Thermochemical resistive switching: materials, mechanisms, and scaling projections (2011, methodology): “This would suggest a smaller current per filament in the small-area device as compared to the large-area device [51], or a non-uniform distribution of filaments in the device area.”