Fabrication and characterization of transparent conductive Sn-doped β-Ga2O3 single crystal
By N. Suzuki, S. Ohira, Miyoko Tanaka, T. Sugawara, K. Nakajima, T. Shishido. 2007
233 citations recorded by the source corpus.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment
View Paper: https://www.semanticscholar.org/paper/dd1254b05f0dd412ff7e1551070ff0f3ced3f47e
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In Electronic, Optical and Magnetic Materials
In Materials Chemistry
In Renewable Energy, Sustainability and the Environment
Citations in the corpus
- Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, methodology): “1(c)–(f) [42], β-Ga2O3 crystals have been grown by several growth techniques, including edge-defined film fed (EFG) [54], floatingzone (FZ) [55]–[57], Czochralski method (CZ) [58]–[60], and vertical Bridgman (VB) [61]–[63] growth meth-”