230% room temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions
By D. Djayaprawira, K. Tsunekawa, M. Nagai, H. Maehara, S. Yamagata, N. Watanabe, Shinji Yuasa, Yoshishige Suzuki, Koji Ando. INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005., 2005
892 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/dc707b2e4560c480b5de7dd438e5d1afadbf9da9
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In Atomic and Molecular Physics, and Optics
- C. Marrows
- Fumihiro Matsukura
- Shoji Ikeda
- Can-Ming Hu
- Manuel Bibes
- M. Harder
- J. van den Brink
- Julie Grollier
In Electrical and Electronic Engineering
- Uwe Schroeder
- Thomas Mikolajick
- I. Fina
- Vincent Garcia
- M. Harder
- Can-Ming Hu
- R. Woodward
- J. MacManus‐Driscoll
In Materials Chemistry
- C. Marrows
- Uwe Schroeder
- Thomas Mikolajick
- Vincent Garcia
- Manuel Bibes
- Fumihiro Matsukura
- I. Fina
- J. MacManus‐Driscoll
Citations in the corpus
- Magnetic Tunnel Junctions for Spintronic Memories and Beyond (2007, background): “9(b), for the Co90Fe10 fixed layer, the MgO barrier also inherits the texture, resulting in low TMR ratio.”
- Electric-field-assisted switching in magnetic tunnel junctions. (2012, background): “Usually the MTJs have relatively thick ferromagnetic layers (≥3 nm) with in-plan”
- Current Sensing Techniques: A Review (2009, background): “Using the TMR effect, resistance changes up to 230% at room temperature have been reported [59], [60].”
- Towards Oxide Electronics: a Roadmap (2019, methodology): “the CoFeB/MgO/ CoFeB structure is used for most practical applications since the ini-tial growth of the amorphous (a-)CoFeB layer can be achieved on any kind of underlayer [512].”
- Development of the magnetic tunnel junction MRAM at IBM: From first junctions to a 16-Mb MRAM demonstrator chip (2006, background): “[52] then obtained a TMR value of 230% for MgO-based tunnel junctions with nominal structures containing PtMn/CoFeB/MgO/ CoFeB layers.”