High-mobility window for two-dimensional electron gases at ultrathin AlN∕GaN heterojunctions
By Yu Cao, Debdeep Jena. 2007
286 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/d5d32cd92a0e413c13fbc7074112444e92fd8e6b
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In Condensed Matter Physics
In Electronic, Optical and Magnetic Materials
Citations in the corpus
- 205-GHz (Al,In)N/GaN HEMTs (2010, background): “Certain researchers have addressed this problem by using AlN thin top barriers to boost channel sheet densities [4].”