Worst-case bias during total dose irradiation of SOI transistors

By V. Ferlet-Cavrois, T. Colladant, P. Paillet, J. Leray, O. Musseau, J. Schwank, M. Shaneyfelt, J. Pelloie, J. Poncharra. 2000

134 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/d0f96c9cd9a94906243c4f76fca6362d85b6b09c

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In Electrical and Electronic Engineering

1. J. Schwank
2. Paul E. Dodd
3. J. Felix
4. D. Fleetwood
5. Lloyd W. Massengill

Citations in the corpus

• Radiation Effects in MOS Oxides (2008, methodology): “Simulations and data [91] have also shown that the OFF bias condition (drain at”