Thermal conductivity of GaN crystals in 4.2-300 K range

By A. Jeżowski, B. Danilchenko, M. Boćkowski, I. Grzegory, S. Krukowski, T. Suski, T. Paszkiewicz. 2003

163 citations recorded by the source corpus.

View Paper: https://www.semanticscholar.org/paper/cacbaacdb0ac0a57614db6729f6604669fb15b96

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1. J. D. del Alamo
2. Jungwoo Joh
3. Enrico Zanoni
4. Matteo Meneghini
5. Qiang Li

Citations in the corpus

• A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors (2011, background): “a purely thermal origin as the thermal conductivity changes with temperature [32]–[34], and this would lead to a thermal”