Nanoscale device modeling: the Green’s function method
By Supriyo Datta. 2000
984 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Computational Theory and Mathematics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/c86197ac9e84f4521df83fb48f6cf9f2d1b696bb
How researchers see this paper
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In Atomic and Molecular Physics, and Optics
- Mark S. Lundstrom
- Anisur Rahman
- Gianluca Fiori
- G. Iannaccone
- Jing Guo
- R. Venugopal
- Zhibin Ren
- Sebastien Goasguen
In Computational Theory and Mathematics
In Electrical and Electronic Engineering
- Mark S. Lundstrom
- Anisur Rahman
- Jing Guo
- Supriyo Datta
- G. Iannaccone
- Gianluca Fiori
- Zhibin Ren
- Sebastien Goasguen
Citations in the corpus
- nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs (2003, methodology): “Since each scattering center is phenomenologically treated as an additional contact, nanoMOS models the effect of outscattering by adding an additional potential to the Schrödinger equation [9]”
- Theory of ballistic nanotransistors (2003, background): “For a quantum transport model, the local density of states fillable by the source and drain can be evaluated directly from the spectral function [27], [28].”
- Simulation of Graphene Nanoribbon Field-Effect Transistors (2007, methodology): “ of the three-dimensional Poisson and the Schro¨dinger equation with open boundary conditions, within the Non-Equilibrium Green’s Function formalism (NEGF) [11]. The retarded Green’s function G reads [12] G(E) = (E +iη+)I −H −Σ −1 , (1) where E is the energy, I the identity matrix, Σ is the self-ene”