Simulation of Graphene Nanoribbon Field-Effect Transistors
By Gianluca Fiori, G. Iannaccone. IEEE Electron Device Letters, 2007
309 citations recorded by the source corpus.
We present an atomistic 3-D simulation of graphene nanoribbon field-effect transistors (GNR-FETs), based on the self consistent solution of the 3-D Poisson and Schrodinger equations with open boundary conditions within the nonequilibrium Green's function formalism and a tight-binding Hamiltonian. With respect to carbon nanotube FETs, GNR-FETs exhibit comparable performance, reduced sensitivity to the variability of channel chirality, and similar leakage problems due to band-to-band tunneling. Acceptable transistor performance requires prohibitive effective nanoribbon width of 1-2 nm and atomistic precision that could in principle be obtained with periodic etch patterns or stress patterns.
Subfields: Biomedical Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/5d50975c1e43bce7b9d5a485f9cac7944f8c3bdd
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In Biomedical Engineering
In Materials Chemistry
- Jing Guo
- Youngki Yoon
- A. Mahmood
- E. Dujardin
- C. Soldano
- Gianluca Fiori
- G. Iannaccone
- Gianaurelio Cuniberti
Citations in the corpus
- Nonvolatile Switching in Graphene Field-Effect Devices (2008, background): “the use of graphene nanoribbons (GNRs) narrower than 5 nm, which, in theory, will have a band gap larger than 500 meV [11], [12].”
- Production, properties and potential of graphene (2010, background): “Page 23 of 57 Yet large enough ION/IOFF will require the fabrication of very narrow ribbons with atomically precise edges.[229] Transmission electron microscopy (TEM) has recently proven that unsupported zig-zag and armchair ribbon edges were stable in ambient conditions in vacuum.”
- Charge transport in disordered graphene-based low dimensional materials (2008, background): “The gap opening can be quantified by comparing N-N and third nearest neighbor (3N-N) tight-binding results with each other (see Fig. 6). The relative opening or closing of the band gap decreases with the width as 1/N . Furthermore, it has been shown that edge deformations [34, 35] and strain [ 70 , ”
- Ultralow-Voltage Bilayer Graphene Tunnel FET (2009, background): “Let us stress that the alternative option of inducing a gap by means of lateral confinement to fabricate graphene nanoribbon field-effect transistors (FETs) [5] requires single-atom control and prohibitive lithography to define widths close to 1 nm [ 6 ].”
- Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs (2008, methodology): “Device characteristics of GNRFETs are calculated by solving the Schrödinger equation using the NEGF formalism [25] selfconsistently with the 3-D Poisson equation [18]–[21].”