Thermal conduction in doped single-crystal silicon films
By Mehdi Asheghi, K. Kurabayashi, Reza Kasnavi, Kenneth E. Goodson. 2002
457 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/c46bd16856eb72c31829c76bcbc574a18667434f
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Atomic and Molecular Physics, and Optics
- Thomas W. Kenny
- Saurabh A. Chandorkar
- Matt Hopcroft
- Reza Abdolvand
- Ahmet Erbil
- Gavin K. Ho
- Siavash Pourkamali
- A. Hashimura
In Electrical and Electronic Engineering
- Thomas W. Kenny
- Saurabh A. Chandorkar
- Matt Hopcroft
- Reza Abdolvand
- Ahmet Erbil
- Gavin K. Ho
- Siavash Pourkamali
- A. Hashimura
In Materials Chemistry
Citations in the corpus
- Piezoresistive heat engine and refrigerator (2010, unknown): “S5] c44 (GPa) 80 [S5] ρd (kg/m 3) 2329 ρdc(Ω⋅m) 10 -4 αt (K -1) 2.6×10-6 [S7] π11 (Pa -1) -102.2×10-11 [S1] π12 (Pa -1) 53.4×10-11 [S1] π44 (Pa -1) -13.6×10-11 [S1] cp (J/(kg⋅K)) 702 kh (W/(m⋅K)) 113 [S6] 28 Table S2 Oscillator parameters. FEM Simulation Measured fres (MHz) 1.335 1.258 Im β (A-2) 58”
- Impact of geometry on thermoelastic dissipation in micromechanical resonant beams (2006, result): “In particular, a thermal conductivity of 90 W/m/K is a reasonable value for highly doped single and polycrystalline silicon when compared to values previously reported [28], [29].”
- THERMAL CONDUCTIVITY OF DOPED POLYSILICON LAYERS (2001, background): “[13] indicate that doping single-crystal silicon layers with boron concentrations greater han cm reduces the thermal conductivity only at temperatures below approximately 100 K.”
- High-Q single crystal silicon HARPSS capacitive beam resonators with self-aligned sub-100-nm transduction gaps (2003, methodology): “The value for thermal conductivity was taken from the experimental plots given in [22] for a p-type low-resistivity silicon substrate with doping levels in excess of cm .”
- Insight into boron-doped diamond Raman spectra characteristic features (2017, background): “This result is not too surprising as impurities are known to strongly reduce semiconductors' thermal conductivity by two effects: carrier-phonon scattering (for electrically active impurities) and phonon-impurity scattering (due to the impurities' mass and radius differences) [37].”