Two-dimensional quantum mechanical modeling of nanotransistors

By A. Svizhenko, M. Anantram, T. Govindan, B. Biegel, R. Venugopal. 2001

460 citations recorded by the source corpus.

Quantization in the inversion layer and phase coherent transport are anticipated to have significant impact on device performance in “ballistic” nanoscale transistors. While the role of some quantum effects have been analyzed qualitatively using simple one-dimensional ballistic models, two-dimensional (2D) quantum mechanical simulation is important for quantitative results. In this paper, we present a framework for 2D quantum mechanical simulation of a nanotransistor/metal oxide field effect transistor. This framework consists of the nonequilibrium Green’s function equations solved self-consistently with Poisson’s equation. Solution of this set of equations is computationally intensive. An efficient algorithm to calculate the quantum mechanical 2D electron density has been developed. The method presented is comprehensive in that treatment includes the three open boundary conditions, where the narrow channel region opens into physically broad source, drain and gate regions. Results are presented for (i) dr...

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/b07abc75d76e18a3b93e5ebf760cef7df3102c11

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In Atomic and Molecular Physics, and Optics

In Electrical and Electronic Engineering

Citations in the corpus

A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs (2007, methodology): “It is based on the standard algorithm that is used to compute particular elements of the Green function using the Dyson equation [22] recursively without inverting the whole matrix.”
Role of scattering in nanotransistors (2002, methodology): “For completeness, we state the expressions for the electron and current densities used [26] (19) (20) Note that (19) and (20) do not include spin and valley degeneracies.”
Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs (2008, methodology): “numerical algorithms of [ 44 ] have been employed in our computational simulations.”
Generalized effective-mass approach for n-type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers (2004, methodology): “Together, the NEGF formalism and the effective mass equation have been used to describe transport in nanoscale MOSFETs both in the ballistic limit [6-9], as well including the effects of carrier scattering [10, 11].”