Hexagonal phase-pure wide band gap ε-Ga2O3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition
By Xiaochuan Xia, Yuanpeng Chen, Q. Feng, Hongwei Liang, Pengcheng Tao, Mengxiang Xu, G. Du. 2016
158 citations recorded by the source corpus.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment
View Paper: https://www.semanticscholar.org/paper/ab13c957c8cca2d0cb9bca30cfdf0ca565b77f87
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In Electronic, Optical and Magnetic Materials
In Materials Chemistry
In Renewable Energy, Sustainability and the Environment
Citations in the corpus
- Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, background): “From the Table I, β-Ga2O3 has a large Eg of 4.6–4.9 eV and high Ec of 8 MV.cm−1, much higher than that of SiC and GaN, making a high electric field, voltage, and temperature operation device.”